STGB30H60DLLFBAG Datasheet, STMicroelectronics

* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* Logic level gate drive
* High speed switching series
* Minimized tail current
*.

* Ignition Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structu.

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.