STGB19NC60KD igbt equivalent, 20 a - 600 v - short circuit rugged igbt.
* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction
susceptibility)
* Short circuit withstand time 10 µs
* IGBT co-packaged with.
* High frequency inverters
* Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™ process result.
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Datasheet − production data
3 2 1
TO-220
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram.
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