STGB19NC60K igbt equivalent, 20 a - 600 v - short circuit rugged igbt.
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* Low
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on-voltage drop (VCE(sat))
Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs.
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High frequency inverters Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™ process resu.
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking GB19NC60K GP19NC60K Package D2PAK T.
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