STG50M170F3D7 datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Low VCE(sat) = 2 V (typ.) @ IC = 50 A
* 10 μs of short-circuit withstand time
* Minimized tail current
* Tight parameter distribution
* Positive VCE.

Application

E
* Industrial motor control EGCD
* Industrial drives Description This device is an IGBT developed using an.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

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