* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
* Tight parameter distributi.

E
* Industrial motor control EGCD
* Industrial drives
* Solar inverters
* Uninterruptable power su.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

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