STFI26NM60N mosfet equivalent, n-channel power mosfet.
Order code STFI26NM60N
VDS 600 V
RDS(on) max 0.165 Ω
ID 20 A
* Fully insulated and low profile package with increased creepage path from pin to heatsink plate
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation .
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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