STFI260N6F6 mosfet equivalent, n-channel power mosfet.
Order codes STFI260N6F6
VDSS 60 V
RDS(on) max < 0.003 Ω
ID 80 A
* Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technolo.
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
12 3 I²PAKFP (TO-281)
Figure 1. Interna.
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