STF8NM50N mosfet equivalent, n-channel power mosfet.
Order codes VDSS@TJMAX RDS(on)max. ID
STF8NM50N
550 V
< 0.79 Ω 5 A
* 100% avalanche tested
* Low input capacitances and gate charge
* Low gate input resi.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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