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STF8NM50N - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes VDSS@TJMAX RDS(on)max. ID STF8NM50N 550 V < 0.79 Ω 5 A.
  • 100% avalanche tested.
  • Low input capacitances and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF8NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh™II Power MOSFET in TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID STF8NM50N 550 V < 0.79 Ω 5 A ■ 100% avalanche tested ■ Low input capacitances and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 !-V Table 1.
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