STF80N10F7 mosfet equivalent, n-channel power mosfet.
Order codes
VDS @ RDS(on) TJmax max
STD80N10F7
0.01 Ω
STF80N10F7
0.01 Ω
100 V
STH80N10F7-2
0.0095 Ω
STP80N10F7
0.01 Ω
ID 70 A 40 A
80 A
PTOT 85 W 30 W
110 W
.
* Switching applications
Description
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These devices utilize the 7 generation of design rules of ST’s proprietary S.
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These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
'3$.72DQG 72)3 QR7$%
+3$.
$0.
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