STF8209
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
G2 S2 G1 S1 S1
P IN 1
Bottom Drain Contact (D1/D2) S2
G1 3 S1 2
T D F N 2X 3
4 G2 5 6 S2 S2
D1/D2
S1
(Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 20 ±12 6.5 5.2 40 1.56 1.00 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Apr,10,2012
.samhop..tw
Ver 2.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250u A VDS=18V , VGS=0V
Min 20
Typ
Max
Units V u A u A
OFF CHARACTERISTICS Drain-Source Breakdown Voltage...
