Order code VDS RDS(on) max. STF7NM80 800 V 1.05 Ω
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance ID 6.5 A.

* Switching applications Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutio.

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/d.

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