3 2 1 TO-220FP Figure 1. Internal schematic diagram Order code STF7N65M2 VDS 650 V RDS(on) max 1.15 Ω ID 5A
* Extremely low gate charge
* Excellent output c.

* Switching applications Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 techno.

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is the.

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