STF18NM60ND datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND VDSS @ TJmax 650 V RDS(on) max ID <0.29 Ω 13 A
* The worldwide best RDS(on)* area amongst the fast r.

Application

* Switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are pro.

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance a.

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