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STF18N60M2 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1_no_tab technology.

Key Features

  • Order code VDS @TJmax RDS(on) max. STF18N60M2 650 V 0.280 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription for STF18N60M2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STF18N60M2. For precise diagrams, and layout, please refer to the original PDF.

STF18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) Features Order code VDS @TJmax RDS(on) max. ...

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e 23 1 TO-220FP D(2) G(1) Features Order code VDS @TJmax RDS(on) max. STF18N60M2 650 V 0.280 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters • Resonant converters ID 13 A Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1_no_tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.