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STF18N60DM2 - N-CHANNEL POWER MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code STF18N60DM2 VDS 600 V RDS(on) max. 0.295 Ω ID 13 A.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Datasheet Details

Part number STF18N60DM2
Manufacturer STMicroelectronics
File Size 578.84 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STF18N60DM2 Datasheet
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STF18N60DM2 N-channel 600 V, 0.260 Ω typ., 13 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF18N60DM2 VDS 600 V RDS(on) max. 0.295 Ω ID 13 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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