STF16N50M2 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STD16N50M2 STF16N50M2 STP16N50M2 VDS at TJ max. RDS(on) max. 550 V 0.28 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profi.

Application

* Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 techn.

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitabl.

Image gallery