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STF16N65M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 Ω 11 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected 72)3 Figure 1. Internal schematic diagram , TAB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 Ω 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected 72)3 Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order codes STF16N65M2 AM15572v1 Table 1.