STF13NM60N datasheet, mosfet equivalent, ST Microelectronics

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Features and benefits

Order code VDS RDS(on) max. ID STF13NM60N 600 V 360 mΩ 11 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistan.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generati.

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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