STF13NM60N-H mosfet equivalent, n-channel mosfet.
Type STF13NM60N-H
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VDSS (@Tjmax) 650 V
RDS(on) max < 0.36 Ω
ID 11 A
100% avalanche tested Low input capacitance and gate charge Low gate input resist.
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET ass.
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.
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