STDRIVEG600W driver equivalent, high voltage half-bridge gate driver.
* dV/dt immunity ±200 V/ns
* Driver current capability:
– 1.3/2.4 A source/sink typ @ 25 °C, 6 V
– 5.5/6 A source/sink typ @ 25 °C.
* High-voltage PFC, DC-DC and DC-AC converters
* Switch-mode power supplies
* UPS systems
* Solar power .
The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.
The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.
The device i.
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