STDRIVEG600 datasheet, driver equivalent, STMicroelectronics

Features and benefits

* dV/dt immunity ±200 V/ns
* Driver current capability:
– 1.3/2.4 A source/sink typ @ 25 °C, 6 V
– 5.5/6 A source/sink typ @ 25 °C.

Application

* High-voltage PFC, DC-DC and DC-AC converters
* Switch-mode power supplies
* UPS systems
* Solar power .

Description

The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is.

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