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STD95NH02L-1 - N-CHANNEL STripFET MOSFET

Download the STD95NH02L-1 datasheet PDF. This datasheet also covers the STD95NH02L variant, as both devices belong to the same n-channel stripfet mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology.

An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters.

Features

  • Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc.
  • Conduction losses reduced d.
  • Switching losses reduced ro.
  • Low threshold device 80A(1) 80A(1) te P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD95NH02L_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc■ Conduction losses reduced d■ Switching losses reduced ro■ Low threshold device 80A(1) 80A(1) te PDescription oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Telecom and Computer capplications. roduApplication Obsolete P■ Switching applications 3 2 1 IPAK 3 1 DPAK Figure 1.
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