Type STD95N4LF3 VDSS 40 V RDS(on) max < 6.0 mΩ ID PD 80 A(1) 110 W 1. Value limited by wire bonding
*
* 3 1 DPAK 100% avalanche tested Logic level drive Appl.

* Switching application
  – Automotive Figure 1. Internal schematic diagram D (TAB or 2) Description.

This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics’ unique "single feature size" strip-based process with fewer critical alignment steps and therefore exceptional manufacturing reproducibility. The resulting t.

STD95N4LF3

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