Order code VDS RDS(on ) max. ID STD7N90K5 900 V 0.81 Ω 7A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low g.

* Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed usin.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts