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STD7N65M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics.

Key Features

  • TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2, TAB) G(1) Order code STD7N65M2 VDS 650 V RDS(on) max 1.15 Ω ID 5A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD7N65M2 N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2, TAB) G(1) Order code STD7N65M2 VDS 650 V RDS(on) max 1.15 Ω ID 5A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. S(3) AM15572v1 Order code STD7N65M2 Table 1.