STD1HN60K3 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge mini.

Application

* Switching applications G(1) S(3) AM01476v1 Description These SuperMESH3™ Power MOSFETs are the result of improv.

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and.

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