STD100N10LF7AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STD100N10LF7AG VDS 100 V RDS(on) max. 9 mΩ ID 80 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)
* Designed for automotive applications and.

Application

and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .

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