STD14NM50N datasheet, mosfet equivalent, ST Microelectronics

Features and benefits

Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N
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* VDSS @ TJmax RDS(on) max ID 1 3 3 DPAK 550 V < 0.29 Ω 12 A 1 2 TO-220 100% avalanche tested L.

Application

Figure 1. Internal schematic diagram Description This second generation of MDmesh™ technology, applies the benefits o.

Description

This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/d.

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