STD140N6F7 Datasheet, STMicroelectronics

Order code STD140N6F7 VDS 60 V RDS(on) max. 3.8 mΩ ID 80 A PTOT 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)
* Among the lowest RDS(on) on th.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. AM0147.