Order code VDS RDS(on)max. ID STD12N50M2 500 V 0.38 Ω 10 A
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalan.

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technolog.

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts