STD12N60M2 Datasheet | STMicroelectronics

Features Order code RDS(on) max. 600 V 0.450 Ω 9A - Extremely low gate charge - Excellent output capacitance (COSS) profile - 100% avalanche tested - Zener-protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD12N60M2 Product summary Order code Marking 12N60M2 Package DPAK Packing Tape and reel DS10854 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC= 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt...