Datasheet Summary
Automotive-grade N-channel 100 V, 6.8 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a DPAK package
- production data
Features
Order code
VDS RDS(on) max. ID PTOT
STD105N10F7AG 100 V 8 mΩ 80 A 120 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also...