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STD105N10F7AG
Automotive-grade N-channel 100 V, 6.8 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS RDS(on) max. ID PTOT
STD105N10F7AG 100 V 8 mΩ 80 A 120 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STD105N10F7AG Datasheet
