STD105N10F7AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD105N10F7AG AM01475v1_Tab Table 1: Device summary Marking Package 105N10F7 DPAK Packing Tape and reel June 2016 DocID027071 Rev 4 This is information on a product...
STD105N10F7AG Key Features
- Designed for automotive