STB9NK80Z datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STB9NK80Z VDS 800 V RDS(on) max. 1.8 Ω ID 5.2 A
* AEC-Q101 qualified
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic c.

Application

* Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed .

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this devic.

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