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STB9NK50Z-1 - N-Channel Enhancement Mode MOSFET

Download the STB9NK50Z-1 datasheet PDF (STB9NK50Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode mosfet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

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Note: The manufacturer provides a single datasheet file (STB9NK50Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1 500 V 500 V 500 V 500 V < 0.85 Ω < 0.85 Ω < 0.85 Ω < 0.85 Ω 7.2 A 7.2 A 7.2 A 7.2 A 110 W 30 W 110 W 110 W s TYPICAL RDS(on) = 0.72 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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