STB8NM60T4 mosfet equivalent, n-channel power mosfet.
Order code
VDS
RDS(on) max.
ID
STB8NM60T4
600 V
1.0 Ω
8A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
.
* Switching applications
Description
G(1) S(3)
AM01475v1_noZen
This N-channel Power MOSFET is developed using S.
G(1) S(3)
AM01475v1_noZen
This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely .
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