STB8NM60N datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < .

Application

ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power .

Description

duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one of the world’s lowest on-resistance and gate charge. It i.

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