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STB8NC70Z-1 - N-CHANNEL MOSFET

Download the STB8NC70Z-1 datasheet PDF. This datasheet also covers the STB8NC70Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 www. DataS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB8NC70Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STB8NC70Z N-CHANNEL MOSFET
STB8NC50 N-CHANNEL MOSFET
STB8NC50-1 N-CHANNEL MOSFET
STB8N65M5 N-Channel Power MOSFET
STB8N90K5 N-channel Power MOSFET

Full PDF Text Transcription

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STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP8NC70Z/FP STB8NC70Z/-1 s s VDSS 700V 700V RDS(on) < 1.2 Ω < 1.2 Ω ID 6.8 A 6.8 A 1 3 s s s TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D2PAK 1 3 2 TO-220 TO-220FP DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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