Order code STB80N4F6AG VDS 40 V RDS(on) max. 6 mΩ ID 80 A
* Designed for automotive applications and AEC-Q101 qualified
* Very low on-resistance
* Very lo.

and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STB80N4F6AG AM01475v1_Tab Table 1: Device .

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