STB80N20M5 mosfet equivalent, power mosfet.
Type STB80N20M5 STP80N20M5
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VDSS @ TJmax 200 V
RDS(on) max < 0.023 Ω
ID 61 A 61 A
3 1
1 2 3
Amongst the best RDS(on) * area High dv/dt ca.
Figure 1. Internal schematic diagram
Description
The devices are N-channel MDmesh™ V Power MOSFET based on an innovativ.
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onr.
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