STB6N80K5 Datasheet, STMicroelectronics

Order code VDS STB6N80K5 800 V
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge
* 100% avalanch.

RDS(on) max. 1.6 Ω ID 4.5 A
* Switching applications G(1) Description This very high voltage N-channel Power MOS.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for appli.

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