STB6N65M2 mosfet equivalent, n-channel power mosfet.
TAB
3 1
D2 PAK
TAB
3 1
DPAK
Figure 1. Internal schematic diagram , TAB
Order codes STB6N65M2 STD6N65M2
VDS RDS(on) max
650 V
1.35 Ω
ID 4A
* Extremely low gat.
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technolog.
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for .
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