STB36NM60ND datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max..

Application

and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance an.

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