STB30NM60N mosfet equivalent, n-channel mosfet.
Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25.
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Po.
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. I.
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