STB27NM60ND datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

TAB 3 1 D2PAK TO-247 3 2 1 Figure 1. Internal schematic diagram $4!" ' 3 !-V Order codes VDS@ Tjmax RDS(on) max ID STB27NM60ND STW27NM60ND 650 V.

Application

and AEC-Q101 qualified
* The worldwide best RDS(on)*area amongst the fast recovery diode devices
* 100% avalanch.

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance an.

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