STB26NM60ND datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND
* 100% avalanche tested
* Low input capacitance and.

Application

* Switching applications * 6 !-V Description These FDmesh™ II Power MOSFETs with intrinsic fast-recov.

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance an.

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