Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15..

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOS.

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is t.

STB19NB20

STB19NB20-1

STB19NF20

STB190NF04

STB190NF04-1

STB100N10F7

STB100N6F7

STB100N6F7-2

STB100NF03L-03

STB100NF03L-03-1

STB100NF04

STB100NF04-1

STB100NF04L

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