STB100N6F7 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

7$% Order code VDS RDS(on) max. ID PTOT STB100N6F7 60 V 5.6 mΩ 100A 125 W '3$. Figure 1. Internal schematic diagram '7$% *
* Among the lowest RDS(on).

Application

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 .

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