STB14NM50N mosfet equivalent, n-channel mosfet.
Order code VDS @ TJmax RDS(on) max ID
STB14NM50N 550 V
0.32 Ω
12 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resis.
* Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-chann.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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