STB14N80K5 Datasheet | STMicroelectronics

Features Order code STB14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A - Industry’s lowest RDS(on) x area - Industry’s best figure of merit (Fo M) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB14N80K5 Table 1: Device summary Marking Package 14N80K5 D²PAK Packing Tape and reel February 2016 Doc ID027723 Rev 1 This is information on a product in full production. 1/16 .st. Contents Contents 1...