STB14N80K5 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STB14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ultra-low gate c.

Application

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

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