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STB13NK60Z-1 - N-channel Power MOSFET

Download the STB13NK60Z-1 datasheet PDF. This datasheet also covers the STB13NK60Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

HIG

Features

  • Type VDSS RDS(on) STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V 600 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB13NK60Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STB13NK60Z-1 N-CHANNEL Power MOSFET
STB13NK60Z N-CHANNEL Power MOSFET
STB13NK60Z N-channel Power MOSFET
STB13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STB13005-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V 600 V <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω ID 13 A 13 A 13 A 13 A 13 A Pw 150 W 150 W 35 W 150 W 150 W ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEABILITY Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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